- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Configuration | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,853
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 23 mOhms | Enhancement | PowerTrench | ||||||||||||
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3,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 96A 10mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 96 A | 8 mOhms | 120 nC | |||||||||||||||
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GET PRICE |
3,815
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16.8 A | 63 mOhms | Enhancement | ||||||||||||
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GET PRICE |
1,111
In-stock
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Fairchild Semiconductor | MOSFET 2.5A Output Current GateDrive Optocopler | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.7 A | 1.9 Ohms | 5 V | 8.3 nC | Enhancement | UniFET | |||||||||
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GET PRICE |
1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | |||||||||||
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GET PRICE |
2,060
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | |||||||||
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GET PRICE |
800
In-stock
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Infineon / IR | MOSFET 40V 195A 1.8mOhm 150nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||||||||
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GET PRICE |
2,000
In-stock
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Vishay Semiconductors | MOSFET 150V Vds 42A Id 10.5nC Qg Typ. | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 150 V | 42 A | 0.0372 Ohms | 2 V | 16 nC | Enhancement | |||||||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | TO-252-3 | Reel | Si | ||||||||||||||||||||||
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GET PRICE |
1,716
In-stock
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ON Semiconductor | Bipolar Transistors - BJT 8A 80V 20W PNP | SMD/SMT | TO-252-3 | + 150 C | MJD45H11 | Single | PNP | 80 V | 5 V | 1 V | 8 A | 90 MHz |
